Proceedings of the 1995 Bipolar/BiCMOS Circuits and Technology Meeting

  • 222 Pages
  • 2.66 MB
  • 7899 Downloads
  • English
by
IEEE Service Center , Piscataway, NJ
Bipolar integrated circuits -- Congresses., Bipolar transistors -- Congre
Other titlesProceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Statementsponsored by IEEE Electron Devices Society, in cooperation with IEEE Circuits and Systems Society, IEEE Twin Cities Section.
ContributionsIEEE Electron Devices Society., IEEE Circuits and Systems Society., Institute of Electrical and Electronics Engineers. Twin Cities Section.
Classifications
LC ClassificationsTK7874 .B56 1995
The Physical Object
Pagination222 p. :
ID Numbers
Open LibraryOL19527193M
ISBN 100780327780, 0780327799, 0780327802

Bipolar/BiCMOS Circuits and Technology Meeting,proceedings of the Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting IEEE Bipolar/BiCMOS Circuits Proceedings of the 1995 Bipolar/BiCMOS Circuits and Technology Meeting book Technology Meeting: Responsibility: sponsored by IEEE Electron Devices Society, in cooperation with IEEE Circuits and Systems Society, IEEE Twin Cities Section.

Bipolar/BiCMOS Circuits and Technology Meeting ( Minneapolis, Minn.). Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting. Piscataway, NJ: IEEE Service Center, © (DLC) (OCoLC) Material Type: Conference publication, Document, Internet resource: Document Type: Internet Resource, Computer File.

Proceedings of the Bipolar/Bicmos Circuits and Technology Meeting [Bipolar/BiCMOS Circuits and Technology Meeting ( Minneapolis, Minn.)] on *FREE* shipping on qualifying offers. Proceedings of the Bipolar/Bicmos Circuits and Technology MeetingAuthor: Minn.) BipolarBiCMOS Circuits and Technology Meeting ( Minneapolis.

Title IEEE Bipolar/BiCMOS Circuits and Technology Meeting Desc:Proceedings of a meeting held OctoberMonterey, California. Prod#:CFP08BIP-CDR ISBN Pages:0 Format:CD-ROM Notes: Authorized distributor of all IEEE proceedings Publ:Institute of Electrical and Electronics Engineers (IEEE) POD Publ:Curran Associates, Inc.

(Jan ). Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting. Country: United States - SIR Ranking of United States: H Index. Subject Area and Category: Engineering Electrical and Electronic Engineering: Publisher: Publication type: Conferences and Proceedings: ISSN:, Coverage:ongoing.

Austin, Texas, USA October IEEE Catalog Number: ISBN: CFP10BIP-PRT IEEE Bipolar/BiCMOS Circuits and Technology Meeting. Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting by Bipolar/BiCMOS Circuits and Technology Meeting ( Minneapolis, Minn.), IEEE Electron Devices Society, IEEE 2 editions - first published in J.D.

Cressler, "Using SiGe HBTs for Extreme Environment Electronics,” Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp.J.D.

Cressler, “Emerging Reliability Issues for SiGe HBTs for Mixed-Signal Circuit Applications,” IEEE Transactions on Device and Materials Reliability, vol.

Details Proceedings of the 1995 Bipolar/BiCMOS Circuits and Technology Meeting PDF

4, pp. It is with great pleasure that we invite you to be a part of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).

After 39 years of the Compound Semiconductor IC Symposium (CSICS), and 32 years of the Bipolar/BiCMOS Circuit and Technology Meeting (BCTM), and after a successful debut in San Diego. D.M. Richey, A.J.

Joseph, J.D. Cressler, and R.C. Jaeger, "Evidence of Non-Equilibrium Base Transport in Si and SiGe Bipolar Transistors at Cryogenic Temperatures," Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp.

October Advanced Modelling Of Distortion Effects In Bipolar Transistors Using Th e Mextram Model - Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the Author: IEEE Created Date: 1/16/ PM. An S-parameter technique for substrate resistance characterization of RF bipolar transistors - Bipolar/BiCMOS Circuits and Technology Meeting, 2 Proceedings of the Author: IEEE Created Date: 11/17/ AM.

The Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) is the premier international forum for bipolar/BiCMOS research for technical communication focused on the needs and interests of the bipolar and BiCMOS community. A novel complementary-SiGe BiCMOS technology developed for ultra-high speed precision analog circuits is presented.

Description Proceedings of the 1995 Bipolar/BiCMOS Circuits and Technology Meeting PDF

The modular process offers comparable NPN and PNP performance utilizing unique. Title: Publisher: Begin Year: End Year: Source: Background: JSTOR: IITK: Background on World Politics: JSTOR: IITK: Bailliere's Clinical.

Book Name Author(s) 15th International Symposium on Intelligent Control Proceedings 0th Edition 0 Problems solved: Institute of Electrical and Electronics Engineers IEEE, Peter P.

Groumpos, IEEE Control Systems Society Staff, IEEE: Symposium on VLSI Circuits 0th Edition. A 'read' is counted each time someone views a publication summary (such as the title, abstract, and list of authors), clicks on a figure, or views or downloads the full-text.

ieee bipolar / bicmos circuits and technology meeting radisson hotel & suites austin, texas, usa october 5 – 6, short course — october 4, sponsored by the electron devices society of the institute of electrical and electronic engineers in.

We present predictive and accurate modeling of base and collector currents in poly‐Si emitter bipolar transistors Ref. Using a standard μm bipolar complementary metal–oxide–semiconductor technology process flow Ref., numerous experiments are performed.

The base and emitter doping profiles are varied intentionally over a wide range in a controlled manner, so as to extract a self. In this study, we report on the incorporation behavior of n-type species in undoped layers grown subsequent to doped layers at low temperature (– °C).

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Lie has been serving on the Executive Committee of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), IEEE SiRF, IEEE MWSCAS, IEEE TSWMCS, and also serving on various Technical Program Committees (TPCs) for IEEE RFIC Symp., IEEE VLSI-DAT, IEEE ISCAS, IEEE PAWR, IEEE-NIH LiSSA, IEEE BIOCAS, etc.

Lie has been awarded with the. Advancements in semiconductor technology have led to a steady increase in the unity power gain frequency (f max) of silicon transistors, both in CMOS and SiGe BiCMOSin turn, enables realization of complex monolithic silicon integrated circuits operating at the millimeter-wave (mm-wave) frequency range (typically defined as 30– GHz).

Kinget and M. Steyaert, "A programmable analog cellular neural network CMOS chip for high speed image processing," invited, IEEE Journal of Solid-State Circuits, vol. 30, pp.March P. Kinget and M. Steyaert, "Evaluation of CNN template robustness towards VLSI implementation," invited, International Journal of Circuit Theory.

A Scalable High Frequency Noise Model for Bipolar Transistors with Appli cation to Optimal Transistor - Bipolar/BiCMOS Circuits and Technology Me eting,Proceedings of the Author: IEEE Created Date: 2/2/ AM. In Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting-BCTM, Boston, MA, USA, 26–28 October ; pp.

– [ Google Scholar ] [ CrossRef ] Figure 1. Abstract. In the last few decades, semiconductor technology has steadily grown in maturity, with silicon transistors able to reach increasingly higher unity-gain frequency (\(f_{ \hbox{max} } \)) has proven to be true for technologies based on both CMOS and SiGe BiCMOS.

A parallel code for lifetime simulations in hadron storage rings in the presence of parasitic beam-beam interactions. Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. Short Course, IEEE Bipolar / BiCMOS Circuits and Technology Meeting, 9 OctoberAtlanta, Georgia [email protected], [email protected] Collaborators.

“ A single-channel 10 b 1GS/s ADC with 1-cycle latency using pipelined cascaded folding,” in Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting,pp.

BTL - Bipolar-Transistor Logic. Looking for abbreviations of BTL. It is Bipolar-Transistor Logic. Bipolar-Transistor Logic listed as BTL. Bipolar-Transistor Logic - How is Bipolar-Transistor Logic abbreviated. Bipolar-Transistor Logic; Bipolar/BiCMOS Circuits and Technology Meeting; Bipolar/BiCMOS Reduced Instruction Set Computer; Bipolarina.

A self-aligned emitter base NiSi electrode technology for advanced high speed bipolar LSIs, IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) () pp.

92– Google Scholar Q. Wang, C. M. Osburn and C. A. Canovai, IEEE Trans. Electron Devi ().IEEE Solid-State Circuits Society. The SSCS Meetings Committee seeks to provide members of SSCS and IEEE with a broad range of high quality, peer-reviewed technical conferences as forums for the presentation of technological advances and for discussions among leading researchers and others interested in the arena of solid-state circuits.The design, simulation and experimental results of the integrated optical and electronic components for 25 Gb/s microwave photonic link based on a µm SiGe:C BiCMOS technology process are presented.

A symmetrical depletion-type Mach-Zehnder modulator (MZM) and driver amplifier are intended for electro-optical (E/O) integrated transmitters.

The optical divider and combiner of MZM are.